![]() Multi-terminal transport measurements of MoS 2 using a van der Waals heterostructure device platform. Boron nitride substrates for high-quality graphene electronics. Realization of room-temperature phonon-limited carrier transport in monolayer MoS 2 by dielectric and carrier screening. Mobility engineering and a metal–insulator transition in monolayer MoS 2. Tuning contact barrier height between metals and MoS2 monolayer through interface engineering. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Ultralow contact resistance between semimetal and monolayer semiconductors. Approaching the intrinsic limit in transition metal diselenides via point defect control. Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. A library of atomically thin metal chalcogenides. Two-dimensional semiconductors for transistors. ![]() ![]() Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. Nature Electronics volume 5, pages 489–496 ( 2022) Cite this article Improving carrier mobility in two-dimensional semiconductors with rippled materials
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